Smart digital micro-capacitor based on doped nanocrystalline silicon with HFO2 high K insulator

Fu, Y.Q., Luo, J. ORCID: 0000-0003-0310-2443, Milne, S.B, Flewitt, A. and Milne, W. (2016) Smart digital micro-capacitor based on doped nanocrystalline silicon with HFO2 high K insulator. Micro Electro Mechanical Systems (MEMS), 2016 IEEE 29th International Conference on Micro Electro Mechanical Systems. pp. 1046-1049. ISSN 978-1-5090-1973-1

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Abstract

A digital variable capacitor has been designed and fabricated based on multi-cantilevers of doped nanocrystalline silicon with variable lengths, suspended over a bottom electrode on top of a high-k material, HfO2, to increase the tuning range of the capacitance. By applying a voltage between the electrodes, the electrostatic force pulls the beams in one-by-one, realizing a digital increase in capacitance. These devices were fabricated using a 4-mask process, and electrical tests confirmed the stepwise increase of the capacitance with voltage from the multi-cantilever digital capacitors.

Item Type: Article
Additional Information: Paper given at and published in the conference proceedings IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS), 24-28 January 2016, Shanghai
Divisions: University of Bolton Research Centres > Institute for Materials Research and Innovation
University of Bolton Research Centres > Institute for Renewable Energy and Environmental Technologies
Depositing User: Tracey Gill
Date Deposited: 21 Sep 2016 11:18
Last Modified: 08 Mar 2018 09:52
Identification Number: 10.1109/MEMSYS.2016.7421813
URI: http://ubir.bolton.ac.uk/id/eprint/934

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