The calculation of the strain and compositional modulation of the wide bandgap semiconductor alloy band structures for Ultra Violet opto-electronic applications

Edwards, Gerard, Fu, Deyi, Zhang, Rong, Liu, Bin, Xie, Zili, Xiu, Xiangqian, Lu, Hai and Zheng, Youdou (2009) The calculation of the strain and compositional modulation of the wide bandgap semiconductor alloy band structures for Ultra Violet opto-electronic applications. In: Research and Innovation Conference 2009, June 2009, Bolton. (Submitted)

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Abstract

In this paper, the k.p perturbation theory is adopted to calculate the interband excitonic transition energies and their polarization selection rules in c-plane AlN films, GaxAl1-xN and InxAl1-xN alloys modulated by both isotropic biaxial in-plane strain and varying alloy compositions. It is shown that valence band mixing induced by both strain and alloy composition has a dramatic influence on the optical polarization properties. The calculated results provide both good physical insight into the band structure engineering and helpful instructions in the future design of high efficiency and novel UV-emitters.

Item Type: Conference or Workshop Item (Paper)
Additional Information: Paper presented at the University of Bolton Research and Innovation Conference, 2009.
Uncontrolled Keywords: AlN, GaAlN, InAlN, strain modulation, band engineering
Divisions: University of Bolton Conferences > Research and Innovation Conference > Research and Innovation Conference 2009
Depositing User: Scott Wilson
Date Deposited: 26 Nov 2013 12:51
Last Modified: 17 Dec 2013 14:17
URI: http://ubir.bolton.ac.uk/id/eprint/382

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