Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

Zhang, Jian, Yang, Hui, Zhang, Qi-Long, Dong, Shurong and Luo, J. ORCID: 0000-0003-0310-2443 (2013) Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition. Applied Physics Letters, 102 (1). ISSN 0003-6951

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Official URL: https://aip.scitation.org/journal/apl

Abstract

ZnO films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate resistive memory behavior. The bipolar resistance switching properties were observed in the Al/PEALD-ZnO/Pt devices. The resistance ratio for the high and low resistance states (HRS/LRS) is more than 103, better than ZnO devices deposited by other methods. The dominant conduction mechanisms of HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. The resistive switching behavior is induced upon the formation/disruption of conducting filaments. This study demonstrated that the PEALD-ZnO films have better properties for the application in 3D resistance random access memory.

Item Type: Article
Subjects: Q Science > Q Science (General)
Divisions: University of Bolton Research Centres > Institute for Renewable Energy and Environmental Technologies
Depositing User: Sarah Taylor
Date Deposited: 26 Mar 2018 09:01
Last Modified: 26 Mar 2018 09:01
Identification Number: 10.1063/1.4774400
URI: http://ubir.bolton.ac.uk/id/eprint/1605

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