Deposition of c-axis orientation aluminum nitride films on flexible polymer substrates by reactive direct-current magnetron sputtering

Jin, Hao, Zhou, J., Dong, Shurong, Feng, B., Luo, J. ORCID: 0000-0003-0310-2443, Wang, D. M., Milne, W. I. and Yang, C. Y. (2012) Deposition of c-axis orientation aluminum nitride films on flexible polymer substrates by reactive direct-current magnetron sputtering. Thin Solid Films, 520 (15). pp. 4863-4870. ISSN 0040-6090

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Abstract

Aluminum nitride (AlN) piezoelectric thin films with c-axis crystal orientation on polymer substrates can potentially be used for development of flexible electronics and lab-on-chip systems. In this study, we investigated the effects of deposition parameters on the crystal structure of AlN thin films on polymer substrates deposited by reactive direct-current magnetron sputtering. The results show that low sputtering pressure as well as optimized N2/Ar flow ratio and sputtering power is beneficial for AlN (002) orientation and can produce a highly (002) oriented columnar structure on polymer substrates. High sputtering power and low N2/Ar flow ratio increase the deposition rate. In addition, the thickness of Al underlayer also has a strong influence on the film crystallography. The optimal deposition parameters in our experiments are: deposition pressure 0.38 Pa, N2/Ar flow ratio 2:3, sputtering power 414 W, and thickness of Al underlayer less than 100 nm.

Item Type: Article
Uncontrolled Keywords: reactive magnetron sputtering; c-axis oriented AlN thin film; polymer substrates
Subjects: Q Science > Q Science (General)
Divisions: University of Bolton Research Centres > Institute for Renewable Energy and Environmental Technologies
Depositing User: Sarah Taylor
Date Deposited: 22 Mar 2018 12:08
Last Modified: 22 Mar 2018 12:08
Identification Number: 10.1016/j.tsf.2012.03.015
URI: http://ubir.bolton.ac.uk/id/eprint/1562

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