Biomaterial gelatin film based crossbar structure resistive switching devices

Ge, Luping, Xuan, Weipeng, Liu, Shuting, Huang, Shuyi, Wang, Xiaozhi, Dong, Shurong, Jin, Hao and Luo, J. ORCID: 0000-0003-0310-2443 (2018) Biomaterial gelatin film based crossbar structure resistive switching devices. IEEE Transactions on Nanotechnology, 17 (1). pp. 78-83. ISSN 1536-125X

Biomaterial gelatin film based crossbar structure resistive switching devices.pdf

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Crossbar structural resistive switching devices (memristors) are fabricated using biomaterial gelatin film as the dielectric layer. The performance of the devices and the effects of gelatin film thickness and baking temperature are investigated. Results show that the optimal gelatin film thickness for the memristors is ~80 nm and baking temperature is ~105 °C. The optimized memristors show a bipolar resistive switching behavior with the resistance ratio between the high-resistance state and low-resistance state over 102, the retention time over 106 s without any obvious deterioration, and excellent stability and reliability, demonstrating its good potential for applications. A conductive atomic force microscopy is used to study the conductivity of the gelatin films under various biases, and the results indicate that the conductive filaments are responsible for the resistive switching behavior of the gelatin-based memristors.

Item Type: Article
Uncontrolled Keywords: memristors; gelatin dielectric; cross-bar array device; bioelectronics
Subjects: Q Science > Q Science (General)
Divisions: University of Bolton Research Centres > Institute for Renewable Energy and Environmental Technologies
Depositing User: Sarah Taylor
Date Deposited: 22 Mar 2018 12:03
Last Modified: 22 Mar 2018 12:03

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