UV sensing using film bulk acoustic resonators based on Au/n-ZnO/ piezoelectric-ZnO/Al structure

Bian, Xiaolei, Jin, Hao, Wang, Xiaozhi, Dong, Shurong, Chen, Guohao, Luo, J. ORCID: 0000-0003-0310-2443, Deen, M Jamal and Qi, Bensheng (2015) UV sensing using film bulk acoustic resonators based on Au/n-ZnO/ piezoelectric-ZnO/Al structure. Scientific Reports, 5. p. 9123. ISSN 2045-2322


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A new type of ultraviolet (UV) light sensor based on film bulk acoustic wave resonator (FBAR) is proposed. The new sensor uses gold and a thin n-type ZnO layer deposited on the top of piezoelectric layer of FBAR to form a Schottky barrier. The Schottky barrier’s capacitance can be changed with UV light, resulting in an enhanced shift in the entire FBAR’s resonant frequency. The fabricated UV sensor has a 50 nm thick n-ZnO semiconductor layer with a carrier concentration of , 1017 cm23 . A large frequency downshift is observed when UV light irradiates the FBAR. With 365 nm UV light of intensity 1.7 mW/cm2 , the FBAR with n-ZnO/ Au Schottky diode has 250 kHz frequency downshift, much larger than the 60 kHz frequency downshift in a conventional FBAR without the n-ZnO layer. The shift in the new FBAR’s resonant frequency is due to the junction formed between Au and n-ZnO semiconductor and its properties changes with UV light. The experimental results are in agreement with the theoretical analysis using an equivalent circuit model of the new FBAR structure.

Item Type: Article
Subjects: Q Science > Q Science (General)
Divisions: University of Bolton Research Centres > Institute for Renewable Energy and Environmental Technologies
Depositing User: Sarah Taylor
Date Deposited: 22 Mar 2018 10:41
Last Modified: 22 Mar 2018 10:41
Identification Number: 10.1038/srep09123
URI: http://ubir.bolton.ac.uk/id/eprint/1551

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