Green memristors array based on gelatin film dielectrics

Ge, Luping, Wang, Xiaozhi, Dong, Shurong, Jin, Hao and Luo, J. ORCID: 0000-0003-0310-2443 (2016) Green memristors array based on gelatin film dielectrics. Nanoelectronics Conference (INEC), 2016. ISSN 2159-3531

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Abstract

Cross-bar structure memristors are fabricated using gelatin film as the dielectrics. The performance of the devices and the effects of gelatin film thickness and baking temperature are investigated. The results show that the best thickness is about 80 nm and the baking temperature is about 105 degrees Celsius. The optimized memristors show a bipolar resistive switching behavior with the ratio between the high resistance state and low resistance state over 104, a retention time over 106 sec without any obvious deterioration, and excellent stability and reliability, demonstrating its application potential.

Item Type: Article
Additional Information: Paper given at and published in the proceedings of the Nanoelectronics Conference (INEC), 9-11 May, 2016, IEEE International
Uncontrolled Keywords: bioelectronics, memristors, gelatin, cross-bar device
Divisions: University of Bolton Research Centres > Institute for Materials Research and Innovation
Depositing User: Tracey Gill
Date Deposited: 15 Mar 2017 14:07
Last Modified: 08 Mar 2018 09:51
Identification Number: 10.1109/INEC.2016.7589365
URI: http://ubir.bolton.ac.uk/id/eprint/1119

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